preliminary SIDC42D120H6 edited by infineon technologies ai ps dd hv3, l 4192s , edition 1, 8.01.2002 fast switching diode chip in emcon - technology this chip is used for: eupec power modules and discrete devices features: 1200v emcon technology 120 m chip soft, fast switching low reverse recovery charge small temperature coefficient applications: smps, resonant applications, drives a c chip type v r i f die size package ordering code SIDC42D120H6 1200v 75a 6.5 x 6.5 mm 2 sawn on foil c67047 - a2207 - a001 mechanical parameter: raster size 6.5 x 6.5 area total / act ive 42.25 / 33.99 anode pad size 5.78 x 5.78 mm 2 thickness 120 m wafer size 150 mm flat position 180 deg max. possible chips per wafer 334 pcs passivation frontside photoimide anode metallisation 3200 nm alsicu cathode metallisation 1400 nm ni ag ? system suitable for epoxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, 500m reject ink dot size ? 0.65mm ; max 1.2mm recommended storage environment store in original container, in dry nitrogen, < 6 mon th at an ambient temperature of 23c
preliminary SIDC42D120H6 edited by infineon technologies ai ps dd hv3, l 4192s , edition 1, 8.01.2002 maximum ratings parameter symbol condition value unit repetitive peak reverse voltage v rrm 1200 v continuous forward current limited by t jmax i f 75 single pulse forward current (depending on wire bond co nfiguration) i fsm t p = 10 ms sinusoidal tbd maximum repetitive forward current limited by t jmax i frm 150 a operating junction and storage temperature t j , t stg - 55...+150 c static electrical characteristics (tested on chip), t j =25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit reverse leakage current i r v r =1200v t j =25 c 250 a cathode - anode breakdown voltage v br i r =4ma t j =25c 1200 v forward voltage drop v f i f =75a t j =25 c 1.6 v dynamic electrical characteristics , at t j = 25 c, unless otherwise specified, tested at component value parameter symbol conditions min. typ. max. unit t rr1 i f =75a t j =25c tbd reverse recovery time t rr2 di/dt=825a/ m s v r =600v t j =125c ns i rrm1 t j =25c 91.8 peak recovery current i rrm2 i f =75a di/dt=825a/ m s v r = 600v t j =125c 97.5 a q rr1 t j =25 c 7.6 reverse recovery charge q rr2 i f =75a di/dt=825a/ m s v r = 600v t j =125 c 13.7 c di rr1 /dt t j = 25 c tbd peak rate of fall of re verse recovery current di rr2 /dt i f =75a di/dt=825a/ m s v r = 600v t j =125 c a/ m s s1 t j =25 c tbd softness s2 i f =75a di/dt=825a/ m s v r = 600v t j =125 c 1
preliminary SIDC42D120H6 edited by infineon technologies ai ps dd hv3, l 4192s , edition 1, 8.01.2002 chip drawing:
preliminary SIDC42D120H6 edited by infineon technologies ai ps dd hv3, l 4192s , edition 1, 8.01.2002 further electrical characteristics: this chip data sheet refers to the device data sheet infineon technologies / eupec tbd description: aql 0,65 for visual inspection according to failure catalog electrostatic discharge sensitive device according to mil - std 883 test - normen villach/prffeld published by infineon technologies ag bereich kommunikation st. - martin - strasse 53 d - 81541 mnchen ? infineon technologies ag 2000 all rights reserved. attention please! the information herein is given to describe certain components and shall not be co nsidered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated her ein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies repre sentatives world - wide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies component s may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. if they fail, it is reasonable to assume that the healt h of the user or other persons may be endangered.
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